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Electronic transport and magnetic properties of Ge1-xMnx/Ge(100) films areinvestigated as a function of Mn dilution. Depending on x, characteristictemperatures separate different regimes in both properties. Resistivityexhibits an insulator-like behavior in the whole temperature range and, belowabout 80 K, two distinct activation energies are observed. At a highertemperature value, TR, resistivity experiences a sudden reduction. Hallcoefficient shows a strong contribution from the anomalous Hall effect and, atTR, a sign inversion, from positive to negative, is recorded. The magneticproperties, inferred from magneto-optical Kerr effect, evidence a progressivedecrease of the ferromagnetic long range order as the temperature is raised,with a Curie temperature TC not far from TR. The transport and magnetic resultsare qualitatively consistent with a percolation mechanism due to bound magneticpolarons in a GeMn diluted magnetic semiconductor, with localized holes [A.Kaminski and S. Das Sarma, Phys. Rev. B 68, 235210 (2003)].Comment: 16 pages, 6 figures. To be published in Phys. Rev.

physical review. b, condensed matter and materials physics

Magnetic and electronic transport percolation in epitaxial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ge</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>–</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Mn</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>films

Magnetic and electronic transport percolation in epitaxialGe1–xMnxfilms