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The electronic structure and spin-dependent tunneling in epitaxialFe/MgO/Fe(001) tunnel junctions are studied using first-principlescalculations. For small MgO barrier thickness the minority-spin resonant bandsat the two interfaces make a significant contribution to the tunnelingconductance for the antiparallel magnetization, whereas these bands are, inpractice, mismatched by disorder and/or small applied bias for the parallelmagnetization. This explains the experimentally observed decrease in tunnelingmagnetoresistance (TMR) for thin MgO barriers. We predict that a monolayer ofAg epitaxially deposited at the interface between Fe and MgO suppressestunneling through the interface band and may thus be used to enhance the TMRfor thin barriers.Comment: 4 pages, 3 eps figures (2 in color), revtex

physical review. b, condensed matter and materials physics

Effect of interface states on spin-dependent tunneling in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Mg</mml:mi><mml:mi mathvariant="normal">O</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow></mml:math>tunnel junctions

Effect of interface states on spin-dependent tunneling inFe∕MgO∕Fetunnel junctions