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We present an in-depth analysis of the atomic and electronic structure of thequasi one-dimensional (1D) surface reconstruction of Ga on Si(112) based onScanning Tunneling Microscopy and Spectroscopy (STM and STS), RutherfordBackscattering Spectrometry (RBS) and Density Functional Theory (DFT)calculations. A new structural model of the Si(112)6 x 1-Ga surface isinferred. It consists of Ga zig-zag chains that are intersected byquasi-periodic vacancy lines or misfit dislocations. The experimentallyobserved meandering of the vacancy lines is caused by the co-existence ofcompeting 6 x 1 and 5 x 1 unit cells and by the orientational disorder ofsymmetry breaking Si-Ga dimers inside the vacancy lines. The Ga atoms are fullycoordinated, and the surface is chemically passivated. STS data reveal asemiconducting surface and show excellent agreement with calculated LocalDensity of States (LDOS) and STS curves. The energy gain obtained by fullypassivating the surface calls the idea of step-edge decoration as a viablegrowth method toward 1D metallic structures into question.Comment: Submitted, 13 pages, accepted in Phys. Rev. B, notational change in  Fig.

Ga-induced atom wire formation and passivation of stepped Si(112)