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We calculate the temperature, density, and parallel magnetic field dependenceof low temperature electronic resistivity in 2D high-mobility Si/SiGe quantumstructures, assuming the conductivity limiting mechanism to be carrierscattering by screened random charged Coulombic impurity centers. We obtaincomprehensive agreement with existing experimental transport data, compellinglyestablishing that the observed 2D metallic behavior in low-density Si/SiGesystems arises from the peculiar nature of 2D screening of long-range impuritydisorder. In particular, our theory correctly predicts the experimentallyobserved metallic temperature dependence of 2D resistivity in the fullyspin-polarized system

physical review. b, condensed matter and materials physics

Screening-theory-based description of the metallic behavior in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow></mml:math>two-dimensional electron systems

Screening-theory-based description of the metallic behavior inSi∕SiGetwo-dimensional electron systems