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We have performed a systematic investigation of magnetotransport of a seriesof as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We findthat the anisotropic magnetoresistance (AMR) generally decreases withincreasing magnetic anisotropy, with increasing Mn concentration and on lowtemperature annealing. We show that the uniaxial magnetic anisotropy can beclearly observed from AMR for the samples with x >= 0.02. This becomes thedominant anisotropy at elevated temperatures, and is shown to rotate by 90o onannealing. We find that the in-plane longitudinal resistivity depends not onlyon the relative angle between magnetization and current direction, but also onthe relative angle between magnetization and the main crystalline axes. Thelatter term becomes much smaller after low temperature annealing. The planarHall effect is in good agreement with the measured AMR indicating the sample isapproximately in a single domain state throughout most of the magnetisationreversal, with a two-step magnetisation jump ascribed to domain wall nucleationand propagation.Comment: 27 pages, 8 figures, accepted by Phys. Rev.

Anisotropic magnetoresistance and magnetic anisotropy in high-quality (Ga,Mn)As films