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The apparent metal-insulator transition is observed in a high qualitytwo-dimensional electron system (2DES) in the strained Si quantum well of aSi/Si_{1-x}Ge_x heterostructure with mobility \mu=1.9 x 10^5 cm^2/Vs at densityn=1.45 x 10^{11} cm^{-2}. The critical density, at which the thermalcoefficient of low T resistivity changes sign, is ~ 0.32 x 10^{11} cm^{-2}, sofar the lowest observed in the Si 2D systems. In-plane magnetoresistance studywas carried out in the higher density range where the 2DES shows themetallic-like behavior. It is observed that the in-plane magnetoresistancefirst increases as ~ B_{ip}^2 and then saturates to a finite value \rho(B_c)for B_{ip} > B_c. The full spin-polarization field B_c decreases monotonicallywith n but appears to saturate to a finite value as n approaches zero.Furthermore, \rho(B_c)/\rho(0) ~ 1.8 for all the densities ranging from 0.35 x10^{11} to 1.45 x 10^{11} cm^{-2} and, when plotted versus B_{ip}/B_c,collapses onto a single curve

Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well