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The photoluminescence decay in amorphous semiconductors is described by powerlaw $t^{-delta}$ at long times. The power-law decay of photoluminescence atlong times is commonly observed but recent experiments have revealed that theexponent, $delta sim 1.2-1.3$, is smaller than the value 1.5 predicted from ageminate recombination model assuming normal diffusion. Transient currentsobserved in the time-of-flight experiments are highly dispersive characterizedby the disorder parameter $alpha$ smaller than 1. Geminate recombination rateshould be influenced by the dispersive transport of charge carriers. In thispaper we derive the simple relation, $delta = 1+ alpha/2 $. Not only theexponent but also the amplitude of the decay calculated in this study isconsistent with measured photoluminescence in a-Si:H.Comment: 18pages. Submitted for the publication in Phys. Rev.

Dispersive photoluminescence decay by geminate recombination in amorphous semiconductors