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The energetics of point defects in oxide materials plays a major role indetermining their high-temperature properties, but experimental measurementsare difficult, and calculations based on density functional theory (DFT) arenot necessarily reliable. We report quantum Monte Carlo (QMC) calculations ofthe formation energy $E_{\rm S}$ of Schottky defects in MgO, which demonstratethe feasibility of using this approach to overcome the deficiencies of DFT. Inorder to investigate system-size errors, we also report DFT calculations of$E_{\rm S}$ on repeating cells of up to $\sim 1000$ atoms, which indicate thatQMC calculations on systems of only 54 atoms should yield high precision. TheDFT calculations also provide the relaxed structures used in the variationaland diffusion Monte Carlo calculations. For MgO, we find $E_{\rm S}$ to be inclose agreement with results from DFT and from model interaction potentials,and consistent with the scattered experimental values. The prospects forapplying the same approach to transition metal oxides such as FeO areindicated.Comment: 4 pages, one figur

Schottky defect formation energy in MgO calculated by diffusion Monte Carlo