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We present in this paper experimental results on the transport hysteresis inelectron double quantum well structures. Exploring the measurement technique offixing the magnetic field and sweeping a front gate voltage (Vg), we are ableto study the hysteresis by varying the top layer Landau level fillings whilemaintaining a relatively constant filling factor in the bottom layer, allowingus to tackle the question of the sign of Rxx(up)-Rxx(down), where Rxx(up) isthe magnetoresistance when Vg is swept up and Rxx(down) when Vg swept down.Furthermore, we observe that hysteresis is generally stronger in the eveninteger quantum Hall effect (IQHE) regime than in the odd-IQHE regime. This, weargue, is due to a larger energy gap for an even-IQHE state, determined by theLandau level separation, than that for an odd-IQHE state, determined by theZeeman splitting

Hysteresis in the quantum Hall regimes in electron double quantum well structures