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We report here a reexamination of the static properties of vacancies in GaAsby means of first-principles density-functional calculations using localizedbasis sets. Our calculated formation energies yields results that are in goodagreement with recent experimental and {\it ab-initio} calculation and providea complete description of the relaxation geometry and energetic for variouscharge state of vacancies from both sublattices. Gallium vacancies are stablein the 0, -, -2, -3 charge state, but V_Ga^-3 remains the dominant charge statefor intrinsic and n-type GaAs, confirming results from positron annihilation.Interestingly, Arsenic vacancies show two successive negative-U transitionsmaking only +1, -1 and -3 charge states stable, while the intermediate defectsare metastable. The second transition (-/-3) brings a resonant bond relaxationfor V_As^-3 similar to the one identified for silicon and GaAs divacancies.Comment: 14 page

Self-vacancies in gallium arsenide: Anab initiocalculation