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The magnetic properties of the diluted magnetic semiconductors (DMS) (Ga,Mn)As and (Ga, Mn)N are investigated by means of an effective Heisenberg model,whose exchange parameters are obtained from first-principle calculations. Thefinite-temperature properties of the model are studied numerically using amethod based upon the Tyablikov approximation. The method properly incorporatesthe effects of positional disorder present in DMS. The resulting Curietemperatures for (Ga, Mn)As are in excellent agreement with experimental data.Due to percolation effects and noncollinear magnetic structures at higher Mnconcentrations, our calculations predict for (Ga, Mn)N very low Curietemperatures compared to mean-field estimates.

Magnetism in (III,Mn)-V diluted magnetic semiconductors: Effective Heisenberg model