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We report the electrical resistivity, Hall coefficient, thermoelectric power,specific heat, and thermal conductivity on single crystals of the type-VIIIclathrate Ba8Ga16Sn30 grown from Sn-flux. Negative S and R_H over a widetemperature range indicate that electrons dominate electrical transportproperties. Both rho(T) and S(T) show typical behavior of a heavily dopedsemiconductor. The absolute value of S increases monotonically to 243 uV/K withincreasing temperature up to 550 K. The large S may originate from the lowcarrier concentration n=3.7x10^19 cm^(-3). Hall mobility u_H shows a maximum of62 cm^2/Vs around 70 K. The analysis of temperature dependence of u_H suggestsa crossover of dominant scattering mechanism from ionized impurity to acousticphonon scattering with increasing temperature. The existence of local vibrationmodes of Ba atoms in cages composed of Ga and Sn atoms is evidenced by analysisof experimental data of structural refinement and specific heat, which give anEinstein temperature of 50 K and a Debye temperature of 200 K. This localvibration of Ba atoms should be responsible for the low thermal conductivity(1.1 W/m K at 150 K). The potential of type-VIII clathrate compounds forthermoelectric application is discussed.Comment: 6 pages, 6 figures, submitted to Phys. Rev.

physical review. b, condensed matter and materials physics

Structural, transport, and thermal properties of the single-crystalline type-VIII clathrate<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ba</mml:mi><mml:mn>8</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mn>16</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Sn</mml:mi><mml:mn>30</mml:mn></mml:msub></mml:mrow></mml:math>

Structural, transport, and thermal properties of the single-crystalline type-VIII clathrateBa8Ga16Sn30