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The interaction of surface acoustic waves (SAW) with $p$-typeSi/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequenciesof 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fieldsup to 7 T, the SAW attenuation coefficient $\Gamma$ and velocity change $\DeltaV /V$ were found to oscillate with filling factor. Both the real $\sigma_1$ andimaginary $\sigma_2$ components of the high-frequency conductivity have beendetermined and compared with quasi-dc magnetoresistance measurements attemperatures down to 33 mK. By analyzing the ratio of $\sigma_1$ to $\sigma_2$,carrier localization can be followed as a function of temperature and magneticfield. At $T$=0.7 K, the variations of $\Gamma$, $\Delta V /V$ and $\sigma_1$with SAW intensity have been studied and can be explained by heating of the twodimensional hole gas by the SAW electric field. Energy relaxation is found tobe dominated by acoustic phonon deformation potential scattering with weakscreening.Comment: Accepted for publication in PR

physical review. b, condensed matter and materials physics

High-frequency transport in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi mathvariant="normal">Si</mml:mi><mml:mn>0.87</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Ge</mml:mi><mml:mn>0.13</mml:mn></mml:msub></mml:mrow></mml:math>heterostructures studied with …

High-frequency transport inp-typeSi∕Si0.87Ge0.13heterostructures studied with …