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We have investigated the effect of the gate voltage on spin relaxation in anAl0.3Ga0.7As/GaAs/Al0.3Ga0.7As heterostructure. The study is motivated by arecent proposal for a non-ballistic spin field effect transistor that utilizesthe interplay between the Rashba and the Dresselhaus spin-orbit interaction inthe device channel. The model, which utilizes real material parameters, inorder to calculate spin dynamics as a function of the gate voltage has beendeveloped. From the obtained results we define the efficiency of the spinpolarization and spin density modulation. The estimated modulation of the spinpolarization at room temperature is of the order of 15-20%. The results showthat the effect is not sufficient for device applications. However, it can beobserved experimentally by optical pulse-probe techniques.Comment: 9 page

Modulation of spin dynamics in a channel of a nonballistic spin field effect transistor