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We use the dynamical mean field method to investigate electronic propertiesof heterostructures in which finite number of Mott-insulator layers areembedded in a spatially infinite band-insulator. The evolution of thecorrelation effects with the number of Mott insulating layers and with positionin the heterostructure is determined, and the optical conductivity is computed.It is shown that the heterostructures are generally metallic, with moderatelyrenormalized bands of quasiparticles appearing at the interface between thecorrelated and uncorrelated regions.Comment: 4 pages, 4 figure

Spatial inhomogeneity and strong correlation physics: A dynamical mean-field study of a model Mott-insulator–band-insulator heterostructure