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We calculate the zero-temperature resistivity of model 3-dimensionaldisordered metals described by tight-binding Hamiltonians. Two differentmechanisms of disorder are considered: diagonal and off-diagonal. Thenon-equilibrium Green function formalism provides a Landauer-type formula forthe conductance of arbitrary mesoscopic systems. We use this formula tocalculate the resistance of finite-size disordered samples of differentlengths. The resistance averaged over disorder configurations is linear insample length and resistivity is found from the coefficient of proportionality.Two structures are considered: (1) a simple cubic lattice with one s-orbitalper site, (2) a simple cubic lattice with two d-orbitals. For small values ofthe disorder strength, our results agree with those obtained from the Boltzmannequation. Large off-diagonal disorder causes the resistivity to saturate,whereas increasing diagonal disorder causes the resistivity to increase fasterthan the Boltzmann result. The crossover toward localization starts when theBoltzmann mean free path relative to the lattice constant has a value between0.5 and 2.0 and is strongly model dependent.Comment: 4 pages, 5 figure

Numerical resistivity calculations for disordered three-dimensional metal models using tight-binding Hamiltonians