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We have carried out an ultrahigh-field cyclotron resonance study of p-typeIn1-xMnxAs films, with Mn composition x ranging from 0% to 2.5%, grown on GaAsby low-temperature molecular-beam epitaxy. Pulsed magnetic fields up to 500 Twere used to make cyclotron resonance observable in these low-mobility samples.The clear observation of hole cyclotron resonance is direct evidence of theexistence of a large number of itinerant, effective-mass-type holes rather thanlocalized d-like holes. It further suggests that the p-d exchange mechanism ismore favorable than the double exchange mechanism in this narrow gap InAs-baseddilute magnetic semiconductor. In addition to the fundamental heavy-hole andlight-hole cyclotron resonance absorption appearing near thehigh-magnetic-field quantum limit, we observed many inter-Landau-levelabsorption bands whose transition probabilities are stronglydependent on thesense of circular polarization of the incident light.Comment: 8 pages, 10 Postscript figure

physical review. b, condensed matter and materials physics

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Ultrahigh-field hole cyclotron resonance absorption inIn1−xMnxAsfilms