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We have used scanning tunneling microscopy to identify individual phosphorusdopant atoms near the clean silicon (100)-(2x1) reconstructed surface. Thecharge-induced band bending signature associated with the dopants shows up asan enhancement in both filled and empty states and is consistent with theappearance of n-type dopants on compound semiconductor surfaces and passivatedSi(100)-(2x1). We observe dopants at different depths and see a strongdependence of the signature on the magnitude of the sample voltage. Our resultssuggest that, on this clean surface, the antibonding surface state band acts asan extension of the bulk conduction band into the gap. The positively chargeddimer vacancies that have been observed previously appear as depressions in thefilled states, as opposed to enhancements, because they disrupt these surfacebands.Comment: 4 pages, 3 figures. TeX for OSX from Wierde

physical review. b, condensed matter and materials physics

Observation of buried phosphorus dopants near clean<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo></mml:mrow><mml:mtext>−</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>surfaces with scanning tunneling microscopy

Observation of buried phosphorus dopants near cleanSi(100)−(2×1)surfaces with scanning tunneling microscopy