English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We present {\it ab initio} total energy and band structure calculations basedon Density Funtional Theory (DFT) within the Local Density Aproximation (LDA)on group-V mixing effects in the optoelectronic material$(ZnSi)_{1/2}P_{1/4}As_{3/4}$. This compound has been recently proposed bytheoretical design as an optically active material in the 1.5 $\mu$m (0.8 eV)fiber optics frequency window and with a monolithic integration with the Si(001) surface. Our results indicate that alloy formation in the group V planeswould likely occur at typical growth conditions. In addition, desired featuressuch as in-plane lattice constant and energy gap are virtually unchanged andthe optical oscillator strength for band-to-band transitions is increased by afactor of 6 due to alloying

physical review. b, condensed matter and materials physics

Group-V mixing effects in the structural and optical properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mi mathvariant="normal">ZnSi</mml:mi></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>∕</mml:mo><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">P</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>∕</mml:mo><mml:mn>4</mml:mn></mml:mrow></mml:…

Group-V mixing effects in the structural and optical properties of(ZnSi)1∕2P1∕4