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The results of measurements and numerical simulation of charge carrierdistribution and energy states in strained quantum wells In_xGa_{1-x}As/GaAs(0.06 < x < 0.29) by C-V-profiling are presented. Precise values of conductionband offsets for these pseudomorphic QWs have been obtained by means ofself-consistent solution of Schroedinger and Poisson equations and followingfitting to experimental data. For the conduction band offsets in strainedIn_xGa_{1-x}As/GaAs - QWs the expression DE_C(x) = 0.814x - 0.21x^2 has beenobtained.Comment: 9 pages, 12 figures, RevTeX

physical review. b, condensed matter and materials physics

Determination of band offsets in strained<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">As</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">GaAs</mml:mi></mml:mrow></mml:…

Determination of band offsets in strainedInxGa1−xAs∕GaAs