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We present a theory for tunneling spectroscopy in a break-junctionsemiconductor device for materials in which the electronic conduction mechanismis hopping transport. Starting from the conventional expression for the hoppingcurrent we develop an expression for the break-junction tunnel current for thecase in which the tunnel resistance is much larger than the effectivesingle-hop resistances. We argue that percolation like methods are inadequatefor this case and discuss in detail the interplay of the relevant scales thatcontrol the possibility to extract spectroscopic information from thecharacteristic of the device.Comment: 8pp, revtex4, 1 figur

Break-junction tunneling spectroscopy for doped semiconductors in the hopping regime