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Photon correlation measurements reveal memory effects in the optical emissionof single InAs quantum dots with timescales from 10 to 800 ns. With above-bandoptical excitation, a long-timescale negative correlation (antibunching) isobserved, while with quasi-resonant excitation, a positive correlation(blinking) is observed. A simple model based on long-lived charged states ispresented that approximately explains the observed behavior, providing insightinto the excitation process. Such memory effects can limit the internalefficiency of light emitters based on single quantum dots, and could also beproblematic for proposed quantum-computation schemes.Comment: 8 pages, 8 figure

Submicrosecond correlations in photoluminescence from InAs quantum dots