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The filling-controlled metal-insulator transition (MIT) in a two-dimensionalMott-Hubbard system La1.17-xPbxVS3.17 has been studied by photoemissionspectroscopy. With Pb substitution x, chemical potential mu abruptly jumps by ~0.07 eV between x=0.15 and 0.17, indicating that a charge gap is opened at x ~=0.16 in agreement with the Mott insulating state of the d2 configuration. Whenholes or electrons are doped into the Mott insulator of x ~= 0.16, the gap isfilled and the photoemission spectral weight at mu, rho(mu), graduallyincreases in a similar way to the electronic specific heat coefficient,although the spectral weight remains depressed around mu compared to thatexpected for a normal metal, showing a pseudogap behavior in the metallicsamples. The observed behavior of varrho(mu)->0 for x->0.16 is contrasted withthe usual picture that the electron effective mass of the Fermi-liquid systemis enhanced towards the metal-insulator boundary. With increasing temperature,the gap or the pseudogap is rapidly filled up, and the spectra at T=300 Kappears to be almost those of a normal metal. Near the metal-insulatorboundary, the spectra around mu are consistent with the formation of a Coulombgap, suggesting the influence of long-range Coulomb interaction under thestructural disorder intrinsic to this system.Comment: 8 pages, 12 figure

physical review. b, condensed matter and materials physics

Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard system<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">La</mml:mi></mml:mrow><mml:mrow><mml:mn>1.17</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Pb</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></…

Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard systemLa1.17−xPbx