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Extensive electronic structure calculations are performed to obtain thestable geometries of metals like Al, Ga and In on the Si(001) surface at 0.5 MLand 1 ML coverages. Our results coupled with previous theoretical findingsexplain the recent experimental data in a comprehensive fashion. At lowcoverages, as shown by previous works, `Para' dimers give the lowest energystructure. With increasing coverage beyond 0.5 ML, `Ortho' dimers become partof low energy configurations leading toward a `Para' to `Ortho' transition at 1ML coverage. For In mixed staggered dimers (`Ortho' and `Para') give the lowestenergy configuration. For Ga, mixed dimers are non-staggered, while for Al`Para' to `Ortho' transition of dimers is complete. Thus at intermediatecoverages between 0.5 and 1 ML, the `Ortho' and `Para' dimers may coexist onthe surface. Consequently, this may be an explanation of the fact that theexperimental observations can be successfully interpreted using eitherorientation. A supported zigzag structure at 0.5 ML, which resembles ${\rm(CH)_x}$, does not undergo a dimerization transition, and hence stayssemi-metallic. Also, unlike ${\rm (CH)_x}$ the soliton formation is ruled outfor this structure.Comment: 8 pages, 6 figure

Para to ortho transition of metallic dimers on Si(001)