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We examine the radiation induced modification of the Hall effect in highmobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwaveexcitation. The modification in the Hall effect upon irradiation ischaracterized by (a) a small reduction in the slope of the Hall resistancecurve with respect to the dark value, (b) a periodic reduction in the magnitudeof the Hall resistance, $R_{xy}$, that correlates with an increase in thediagonal resistance, $R_{xx}$, and (c) a Hall resistance correction thatdisappears as the diagonal resistance vanishes.Comment: 4 pages text, 4 color figure

physical review. b, condensed matter and materials physics

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Radiation-induced oscillatory Hall effect in high-mobilityGaAs/Alx<…