English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We observe a resonance in the conductance of silicon tunneling devices with adelta-doped barrier. The position of the resonance indicates that it arisesfrom tunneling through the B^+ state of the boron atoms of the delta-layer.Since the emitter Fermi level in our devices is a field-independent referenceenergy, we are able to directly observe the diamagnetic shift of the B^+ level.This is contrary to the situation in magneto-optical spectroscopy, where theshift is absorbed in the measured ionization energy.Comment: submitted to PR

physical review. b, condensed matter and materials physics

Direct observation by resonant tunneling of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">B</mml:mi></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>level in a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>-doped silicon barrier

Direct observation by resonant tunneling of theB+level in aδ-doped silicon barrier