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We report Hall effect measurements on thin films of cobalt-dopedTiO$_{2-\delta}$. Films with low carrier concentrations (10$^{18}$ - 10$^{19}$)yield a linear behavior in the Hall data while those having higher carrierconcentrations (10$^{21}$ - 10$^{22}$) display anomalous behavior near zerofield. In the entire range of carrier concentration, n-type conduction isobserved. The appearance of the anomalous behavior is accompanied by a possiblestructural change from rutile TiO$_{2}$ to Ti$_[n}$O$_{2n-1}$ Magneli phase(s)

physical review. b, condensed matter and materials physics

Hall effect in cobalt-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">TiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mi>−</mml:mi><mml:mi>δ</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>

Hall effect in cobalt-dopedTiO2−δ