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Soft-X-ray emission and absorption spectroscopies with their elementalspecificity are used to determine the local electronic structure of N atoms inGa(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view ofapplications of such materials in optoelectronics. Deviations of the N localelectronic structure in Ga(In)AsN from the crystalline state in GaN aredramatic in both valence and conduction bands. In particular, a depletion ofthe valence band maximum in the N local charge, taking place at the Nimpurities, appears as one of the fundamental origins of reduced opticalefficiency of Ga(In)AsN. Incorporation of In in large concentrations formsIn-rich N local environments such as In4N whose the electronic structureevolves towards improved efficiency. Furthermore, a k-character of some valenceand conduction states, despite the random alloy nature of Ga(In)AsN, manifestsitself in resonant inelastic X-ray scattering.

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties