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Measurements in GaAs hole bilayers with unequal layer densities reveal apronounced magneto-resistance hysteresis at the magnetic field positions whereeither the majority or minority layer is at Landau level filling factor one. Ata fixed field in the hysteretic regions, the resistance exhibits an unusualtime dependence, consisting of random, bidirectional jumps followed by slowrelaxations. These anomalies are apparently caused by instabilities in thecharge distribution of the two layers.Comment: 4 pages, 4 figure

Layer-charge instability in unbalanced bilayer systems in the quantum Hall regime