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Gate-induced wave function manipulation of a single dopant atom is a possiblebasis of atomic scale electronics. From this perspective, we analyzed theeffect of a small nearby gate on a single dopant atom in a semiconductor up tofield ionization. The dopant is modelled as a hydrogen-like impurity and theSchrodinger equation is solved by a variational method. We find that--dependingon the separation of the dopant and the gate--the electron transfer is eithergradual or abrupt, defining two distinctive regimes for the gate-inducedionization process.Comment: 5 pages, 3 EPS-figures. To be published in Phys. Rev.

Gate-induced ionization of single dopant atoms