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The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET(Heterojunction Insulated-Gate Field-Effect Transistor) with extremely highmobility and large $r_{s}$ is found to have a linear dependence on temperature,consistent with the theory of interaction corrections in the ballistic regime.Phonon scattering contributions are negligible in the temperature range of ourinterest, allowing comparison between our measured data and theory without anyphonon subtraction. The magnitude of the Fermi liquid interaction parameter$F_{0}^{\sigma}$ determined from the experiment, however, decreases withincreasing $r_{s}$ for $r_{s}\agt22$, a behavior unexpected from existingtheoretical calculations valid for small $r_{s}$.Comment: 6 pages, 4 figure

physical review. b, condensed matter

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Interaction corrections to two-dimensional hole transport in thelarge−rs