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We report detailed studies of the slow relaxation of the photoinduced excesscharge carriers in organic metal-insulator-semiconductor field effecttransistors consisting of poly(3-hexylthiophene) as the active layer. Therelaxation process cannot be physically explained by processes, which lead to asimple or a stretched-exponential decay behavior. Models based on serialrelaxation dynamics due to a hierarchy of systems with increasing spatialseparation of the photo-generated negative and positive charges are used toexplain the results. In order to explain the observed trend, the model isfurther modified by introducing a gate voltage dependent coulombic distributionmanifested by the trapped negative charge carriers.Comment: 17 pages, 3 Figure

Nonexponential relaxation of photoinduced conductance in organic field effect transistors