English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this paper we examine the effects of varying several experimentalparameters in the Kane quantum computer architecture: A-gate voltage, the qubitdepth below the silicon oxide barrier, and the back gate depth to explore howthese variables affect the electron density of the donor electron. Inparticular, we calculate the resonance frequency of the donor nuclei as afunction of these parameters. To do this we calculated the donor electron wavefunction variationally using an effective mass Hamiltonian approach, using abasis of deformed hydrogenic orbitals. This approach was then extended toinclude the electric field Hamiltonian and the silicon host geometry. We foundthat the phosphorous donor electron was very sensitive to all the experimentalvariables studied in our work, and thus to optimise the operation of thesedevices it is necessary to control all parameters varied in this paper.Comment: 7 pages, 2 tables, 10 figure

Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces