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Ab initio calculations of the reflectance anisotropy of Si(111)-In surfaces are presented. A very pronounced optical anisotropy around 2 eV is predicted for the structural model proposed by Bunk et al. [Phys. Rev. B 59, 12 228 (1999)] for the (4 × 1) reconstructed surface. The (4 X 2)/(8 × 2) reconstructed surface, induced by a slight distortion of the indium chains, is shown to result in a splitting of the 2 eV peak. The calculated results are in excellent agreement with recent polarized reflectance data acquired during the (4×1)→(4×2)/ (8×2) phase transition.

Nanowire-induced optical anisotropy of the Si(111)-In surface