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We have found high ferromagnetic transition temperature in Mn delta-dopedGaAs-based heterostructures grown on GaAs(001) substrates by molecular beamepitaxy. A 0.3 ML Mn d-doped GaAs samples showed high resistivity at lowtemperature and did not show a ferromagnetic behavior. However, in aselectively doped heterostructure (Mn delta-doped GaAs / Be-doped AlGaAs),where holes were supplied from the Be-doped AlGaAs layer, clear ferromagneticorder was observed. The ferromagnetic transition temperature of the selectivelydoped heterostructure was as high as 172K with suitable low-temperature (LT)annealing treatment

physical review. b, condensed matter

Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type selective doping

Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs andp-type selective doping