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Zero bias conductance per spin of nanotube double junction (NTDJ) isinvestigated theoretically using the tight binding model, unrestrictedHartree-Fock approximation and non-equilibrium Green's functions.  NTDJ consists of two metallic nanotubes joined by a piece of semiconductingnanotube, with the transition between the nanotubes made up of sets of 5 and 7member carbon rings.  A quantum well forms in the central semiconducting NT region, bounded bySchottky barriers.  Spin current occurs when Coulomb interactions raise the spin degeneracy ofresonant levels in the quantum well.  As long as an appropriate semiconducting NT length is chosen, spin directioncan be controlled by gate voltage, i.e., NTDJ functions as a nano spin filter.Comment: 4 pages, RevTeX, uses epsf.st

Resonant spin current in nanotube double junctions