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The thermopower and Nernst-Ettingshausen (NE) effect in degeneratesemiconductors and semimetals placed in high electric and magnetic fields arecalculated by taking into account the heating of both electrons and phonons aswell as their thermal and mutual drags.  The magnetic and electric field dependences of the thermoelectric power andthe transverse NE voltage are found in analytical forms. It is shown that inweak and high transverse magnetic fields, the electronic and phonon parts of NEcoefficients change their sign for some scattering mechanisms.

Influence of mutual drag of the carrier-phonon system on the thermopower and transverse Nernst-Ettingshausen effect