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We have carried out a femtosecond two-photon photoemission study of layered semiconductor 2H-MoS 2 (0001) surface. From the detailed time-resolved two-photon photoemission measurements as a function of electron excitation energy, it is found that the relaxation lifetime of hot-electron is extremely short (≤60 fs) and the inverse lifetime depends linearly on the excess energy above the conduction-band minimum. Deviation from the Fermi liquid behavior in layered semiconductor 2H-MoS 2 is discussed.

physical review. b, condensed matter

Hot-electron relaxation in the layered semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>2</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>studied by time-resolved two-photon photoemission spectroscopy

Hot-electron relaxation in the layered semiconductor2H−MoS2studied by time-resolved two-photon photoemission spectroscopy