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Using magnetocapacitance data, we directly determine the chemical potentialjump in a strongly correlated 2D electron system in silicon when the fillingfactor traverses the valley gap at \nu=1 and \nu=3. The data yield a valley gapthat is strongly enhanced compared to the single-particle value and increasesLINEARLY with magnetic field. This result has not been explained by existingtheories.Comment: As published. 4 pages, 3 figure

Strong enhancement of the valley splitting in a two-dimensional electron system in silicon