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We examine the thermodynamic properties of the hole- and electron-dopedcuprates by using the t-t'-t''-J model. We find that the chemical potentialshows different doping dependence between the hole and electron dopings. Recentexperimental data of the chemical potential shift are reproduced except forlightly underdoped region in the hole doping where stripe and/or chargeinhomogeneity are expected to be important. The entropy is also calculated as afunction of the carrier concentration. It is found that the entropy of theelectron-doped system is smaller than that of the hole-doped systems. This isrelated to strong antiferromagnetic short-range correlation that survives inthe electron-doped system.Comment: REVTeX4, 3 pages, 3 figures, to appear in Phys. Rev.

physical review. b, condensed matter

Doping dependence of chemical potential and entropy in hole- and electron-doped high-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>T</mml:mi></mml:mrow><mml:mrow><mml:mi>c</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>cuprates

Doping dependence of chemical potential and entropy in hole- and electron-doped high-Tccuprates