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We discuss the effects of fluctuations of the local density of chargeddopants near a first order phase transition in electronic systems, that isdriven by change of charge carrier density controlled by doping level. Using ageneralization of the Imry-Ma argument, we find that the first order transitionis rounded by disorder at or below the lower critical dimension d_c=3, when atleast one of the two phases has no screening ability. The increase of d_c from2 (as in the random field Ising model) to 3 is due to the long-range nature ofthe Coulomb interaction. This result suggests that large clusters of bothphases will appear near such transitions due to disorder, in both two and threedimensions. Possible implications of our results on manganites and underdopedcuprates will be discussed.Comment: 4 pages with 1 embedded figure. Revised version to appear in PR

Disorder induced cluster formation near first-order phase transitions in electronic systems: Importance of long-range Coulomb interactions