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First-principles calculations are used to calculate the strain dependenciesof the binding and diffusion-activation energies for Ge adatoms on both Si(001)and Ge(001) surfaces. Our calculations reveal that the binding and activationenergies on a strained Ge(001) surface increase and decrease, respectively, by0.21 eV and 0.12 eV per percent compressive strain. For a growth temperature of600 degrees C, these strain-dependencies give rise to a 16-fold increase inadatom density and a 5-fold decrease in adatom diffusivity in the region ofcompressive strain surrounding a Ge island with a characteristic size of 10 nm.Comment: 4 pages, 4 figure

First-principles calculation of the effect of strain on the diffusion of Ge adatoms on Si and Ge(001) surfaces