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Low-temperature electron spin relaxation is studied by the opticalorientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3}to 5x10^17 cm^{-3}.  A peculiarity related to the metal-to-insulator transition (MIT) is observedin the dependence of the spin lifetime on doping near n_D = 2x10^16 cm^{-3}. Inthe metallic phase, spin relaxation is governed by the Dyakonov-Perelmechanism, while in the insulator phase it is due to anisotropic exchangeinteraction and hyperfine interactio

Low-temperature spin relaxation inn-type GaAs