English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A novel interaction mechanism in MOSFET structures and $GaAs/AlGaAs$hetero-junctions between the zone electrons of the two-dimensional (2D) gas andthe charged traps on the insulator side is considered. By applying a canonicaltransformation, off-diagonal terms in the Hamiltonian due to the trapped levelsubsystem are excluded. This yields an effective three-particle attractiveinteraction as well as a pairing interaction inside the 2D electronic band. Atype of Bethe- Goldstone equation for three particles is studied to clarify thecharacter of the binding and the energy of the three-particle bound states. Theresults are used to offer a possible explanation of the Metal-Insulatortransition recently observed in MOSFET and hetero-junctions.Comment: 4 page

Formation of three-particle clusters in heterojunctions and MOSFET structures