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The interplay between spin and charge transport in electrically andmagnetically inhomogeneous semiconductor systems is investigated theoretically.In particular, the theory of spin-polarized bipolar transport in magnetic p-njunctions is formulated, generalizing the classic Shockley model. The theoryassumes that in the depletion layer the nonequilibrium chemical potentials ofspin up and spin down carriers are constant and carrier recombination and spinrelaxation are inhibited. Under the general conditions of an applied bias andexternally injected (source) spin, the model formulates analytically carrierand spin transport in magnetic p-n junctions at low bias. The evaluation of thecarrier and spin densities at the depletion layer establishes the necessaryboundary conditions for solving the diffusive transport equations in the bulkregions separately, thus greatly simplifying the problem. The carrier and spindensity and current profiles in the bulk regions are calculated and the I-Vcharacteristics of the junction are obtained. It is demonstrated that spininjection through the depletion layer of a magnetic p-n junction is notpossible unless nonequilibrium spin accumulates in the bulk regions--either byexternal spin injection or by the application of a large bias. Implications ofthe theory for majority spin injection across the depletion layer, minorityspin pumping and spin amplification, giant magnetoresistance, spin-voltaiceffect, biasing electrode spin injection, and magnetic drift in the bulkregions are discussed in details, and illustrated using the example of a GaAsbased magnetic p-n junction.Comment: 36 pages, 11 figures, 2 table

physical review. b, condensed matter

Theory of spin-polarized bipolar transport in magnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>−</mml:mo><mml:mi>n</mml:mi></mml:math>junctions

Theory of spin-polarized bipolar transport in magneticp−njunctions