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In a recent paper (J.H. Schon, Ch. Kloc, R.C. Haddon and B. Batlogg, Nature408 (2000) 549) a large increase in the superconducting critical temperaturewas observed in C60 doped with holes by application of a high electric field.We demonstrate that the measured Tc versus doping curves can be explained bysolving the (four) s-wave Eliashberg equations in the case of a finite,non-half-filled energy band. In order to reproduce the experimental data, weassume a Coulomb pseudopotential depending on the filling in a very simple andplausible way. Reasonable values of the physical parameters involved areobtained. The application of the same approach to new experimental data (J.H.Schon, Ch. Kloc and B. Batlogg, Science 293 (2001) 2432) on electricfield-doped, lattice-expanded C60 single crystals (Tc=117 K in the hole-dopedcase) gives equally good results and sets a theoretical limit to the linearincrease of Tc at the increase of the lattice spacing.Comment: latex2e, 6 pages, 7 figures, 1 table, revised versio

physical review. b, condensed matter

Possible explanation of electric-field-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi></mml:mrow><mml:mrow><mml:mn>60</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>phenomenology in the framework of Eliashberg theory

Possible explanation of electric-field-dopedC60phenomenology in the framework of Eliashberg theory