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We find that at intermediate temperatures, the metallic temperaturedependence of the conductivity \sigma(T) of 2D electrons in silicon isdescribed well by a recent interaction-based theory of Zala et al. (Phys. Rev.B 64, 214204 (2001)). The tendency of the slope d\sigma/dT to diverge near thecritical electron density is in agreement with the previously suggestedferromagnetic instability in this electron system. Unexpectedly, it is found tooriginate from the sharp enhancement of the effective mass, while the effectiveLande g factor remains nearly constant and close to its value in bulk silicon

Sharp increase of the effective mass near the critical density in a metallic two-dimensional electron system