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We report the results of a Monte Carlo study of a model of (III,Mn)V dilutedmagnetic semiconductors which uses an impurity band description of carrierscoupled to localized Mn spins and is applicable for carrier densities below andaround the metal-insulator transition. In agreement with mean field studies, wefind a transition to a ferromagnetic phase at low temperatures. We compare ourresults for the magnetic properties with the mean field approximation, as wellas with experiments, and find favorable qualitative agreement with the latter.The local Mn magnetization below the Curie temperature is found to be spatiallyinhomogeneous, and strongly correlated with the local carrier charge density atthe Mn sites. The model contains fermions and classical spins and hence weintroduce a perturbative Monte Carlo scheme to increase the speed of oursimulations.Comment: 17 pages, 24 figures, 2 table

Monte Carlo simulations of an impurity-band model for III-V diluted magnetic semiconductors