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We present {\it ab initio} calculations of the spin-dependent electronictransport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situationof a spin-injection experiment. We follow a ballistic Landauer-B\"uttikerapproach for the calculation of the spin-dependent dc conductance in thelinear-responce regime, in the limit of zero temperature. We show that the bulkband structure of the leads and of the semiconductor, and even more theelectronic structure of a clean and abrupt interface, are responsible for acurrent polarisation and a magnetoresistance ratio of almost the ideal 100%, ifthe transport is ballistic. In particular we study the significance of thetransmission resonances caused by the presence of two interfaces.Comment: 13 pages, 9 figure

Ballistic spin injection and detection in Fe/semiconductor/Fe junctions