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Paramagnetic centers in hydrogenated microcrystalline silicon, muc-Si:H have been studied using dark and light-induced electron-spin resonance (ESR). In dark ESR measurements only one center is observed. The g values obtained empirically from powder-pattern line-shape simulations are g(parallel to)=2.0096 and g(perpendicular to)=2.0031. We suggest that this center may be due to defects in the crystalline phase. During illumination at low temperatures, an additional ESR signal appears. This signal is best described by two powder patterns indicating the presence of two centers. One center is asymmetric (g(parallel to)=1.999, g(perpendicular to)=1.996), while the other is characterized by large, unresolved broadening such that unique g values cannot be obtained. The average g value for this center is 1.998. The light-induced signal, which we interpret as coming from carriers trapped in the band tails at the crystalline grain boundaries, remains for at least several minutes after the light is turned off. Although the time scales of the decay curves are very different for two samples prepared by different techniques, both decays can be fitted using the assumption of recombination due to distant pairs of electrons and holes trapped in localized band-tail states

ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon